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FZT605 PDF预览

FZT605

更新时间: 2024-11-17 12:20:07
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美台 - DIODES 晶体晶体管功率双极晶体管开关光电二极管PC局域网
页数 文件大小 规格书
2页 85K
描述
SOT223 NPN SILICON PLANAR MEDIUM

FZT605 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-223
包装说明:SOT-223, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:7
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:325288Samacsys Pin Count:4
Samacsys Part Category:TransistorSamacsys Package Category:SOT223 (3-Pin)
Samacsys Footprint Name:AP02001 SOT223Samacsys Released Date:2016-05-27 09:26:58
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:120 V
配置:DARLINGTON最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

FZT605 数据手册

 浏览型号FZT605的Datasheet PDF文件第2页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTORS  
FZT605  
ISSUE 4 - MARCH 2001  
FEATURES  
C
*
*
Guaranteed hFE Specified up to 2A  
Fast Switching  
E
PARTMARKING DETAIL -  
COMPLEMENTARY TYPES - FZT705  
FZT605  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
140  
Collector-Emitter Voltage  
Emitter-Base Voltage  
120  
V
10  
V
Peak Pulse Current  
4
A
Continuous Collector Current  
Power Dissipation  
IC  
1.5  
2
A
Ptot  
W
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. MAX. UNIT CONDITIONS.  
Collector-Base  
V(BR)CBO 140  
V
IC=100µA  
IC=10mA*  
IE=100µA  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
120  
10  
V
Emitter-Base Breakdown Voltage V(BR)EBO  
V
Collector Cut-Off  
Current  
ICBO  
0.01 µA  
VCB=120V  
10  
0.1  
10  
VCB=120V,Tamb=100°C  
µA  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
VEB=8V  
Collector-Emitter Cut-Off Current ICES  
VCES=120V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
1.0,  
1.5  
V
V
IC=250mA, IB=0.25mA*  
IC=1A, IB=1mA*  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.8  
1.7  
V
V
IC=1A, IB=1mA*  
IC=1A, VCE=5V*  
Static Forward  
Current Transfer Ratio  
2K  
IC=50mA, VCE=5V  
IC=500mA, VCE=5V*  
IC=1A, VCE=5V*  
5K  
2K  
0.5K  
100K  
IC=2A, VCE=5V*  
Transition Frequency  
ft  
150  
MHz IC=100mA, VCE=10V  
f=20MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
Cobo  
ton  
90 Typical pF  
15 Typical pF  
VEB=500mV, f=1MHz  
VCB=10V, F=1MHz  
0.5 Typical nsec IC=500mA, VCE=10V  
B1=IB2=0.5mA  
I
toff  
1.6 Typical nsec  
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%  
Spice parameter data is available upon request for these devices.  
TBA  

FZT605 替代型号

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