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FZT603 PDF预览

FZT603

更新时间: 2024-11-17 10:22:59
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美台 - DIODES 晶体晶体管达林顿晶体管开关光电二极管局域网
页数 文件大小 规格书
3页 125K
描述
SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

FZT603 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-223包装说明:SOT-223, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.24外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

FZT603 数据手册

 浏览型号FZT603的Datasheet PDF文件第2页浏览型号FZT603的Datasheet PDF文件第3页 
SOT223 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTOR  
ISSUE 3 – NOVEMBER 1995  
FZT603  
FEATURES  
*
*
*
2A continuous current  
Useful hFE up to 6A  
Fast Switching  
C
E
PARTMARKING DETAIL – DEVICE TYPE IN FULL  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
100  
80  
10  
6
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation  
IC  
2
A
Ptot  
2
W
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
100  
240  
110  
16  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
80  
Emitter-Base Breakdown  
Voltage  
10  
Collector Cut-Off Current  
0.01  
10  
V
CB=80V  
µA  
µA  
VCB=80V, T =100°C  
amb  
Emitter Cut-Off Current  
Collector Cut-Off Current  
IEBO  
0.1  
10  
VEB=8V  
µA  
µA  
ICES  
VCES=80V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.79  
0.80  
0.88  
0.99  
0.86  
0.88  
0.90  
1.00  
1.13  
V
V
V
V
V
IC=0.25A, IB=0.25mA*  
IC=0.4A, IB=0.4mA*  
IC=1A, IB=1mA*  
IC=2A, IB=20mA*  
IC=2A, IB=20mA  
†
† Tj=150°C  

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