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FJP13009TU PDF预览

FJP13009TU

更新时间: 2024-09-13 03:36:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管高压局域网
页数 文件大小 规格书
6页 132K
描述
High Voltage Fast-Switching NPN Power Transistor

FJP13009TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.39
最大集电极电流 (IC):12 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):6
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

FJP13009TU 数据手册

 浏览型号FJP13009TU的Datasheet PDF文件第2页浏览型号FJP13009TU的Datasheet PDF文件第3页浏览型号FJP13009TU的Datasheet PDF文件第4页浏览型号FJP13009TU的Datasheet PDF文件第5页浏览型号FJP13009TU的Datasheet PDF文件第6页 
March 2007  
FJP13009  
High Voltage Fast-Switching NPN Power Transistor  
High Voltage Capability  
High Switching Speed  
Suitable for Electronic Ballast and Switching Mode Power Supply  
TO-220  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings*  
T
= 25°C unless otherwise noted (notes_1)  
C
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
700  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
9
12  
V
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
A
ICP  
24  
A
IB  
6
A
PC  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature Range  
100  
150  
-65 ~ 150  
W
°C  
°C  
TJ  
TSTG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES_1:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Package Marking and Ordering Information  
Device Item (notes_2)  
FJP13009  
Device Marking  
J13009  
Package  
TO-220  
Packing Method  
Qty(pcs)  
1,200  
Bulk  
TUBE  
TUBE  
FJP13009H2TU  
FJP13009TU  
Notes_2 :  
J130092  
TO-220  
1,000  
J13009  
TO-220  
1,000  
1) The Affix “-H2” means the hFE classification.  
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.  
©2007 Fairchild Semiconductor Corporation  
FJP13009 Rev. B  
1
www.fairchildsemi.com  

FJP13009TU 替代型号

型号 品牌 替代类型 描述 数据表
FJP13009H2TU FAIRCHILD

类似代替

High Voltage Fast-Switching NPN Power Transistor
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MJE13009 ONSEMI

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NPN SILICON POWER TRANSISTOR

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