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MJE13009G PDF预览

MJE13009G

更新时间： 2024-12-01 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
10页 148K
描述
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS

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中文翻译

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MJE13009G 技术参数

是否无铅： 不含铅生命周期：Contact Manufacturer
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.05Is Samacsys：N
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：12 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：6
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

MJE13009G 数据手册

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MJE13009  
Preferred Device  
SWITCHMODEt Series  
NPN Silicon Power  
Transistors  
The MJE13009 is designed for high−voltage, high−speed power  
switching inductive circuits where fall time is critical. They are  
particularly suited for 115 and 220 V SWITCHMODE applications  
such as Switching Regulators, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
http://onsemi.com  
12 AMPERE  
NPN SILICON  
POWER TRANSISTOR  
400 VOLTS − 100 WATTS  
Features  
• V  
400 V and 300 V  
CEO(sus)  
• Reverse Bias SOA with Inductive Loads @ T = 100_C  
C
• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t @ 8 A,  
c
100_C is 120 ns (Typ)  
• 700 V Blocking Capability  
• SOA and Switching Applications Information  
• Pb−Free Package is Available*  
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
Rating  
Collector−Emitter Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
400  
700  
9
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
STYLE 1  
2
V
CEO(sus)  
3
V
CEV  
V
EBO  
MARKING DIAGRAM  
Collector Current − Continuous  
− Peak (Note 1)  
I
12  
24  
C
I
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
6
12  
Adc  
Adc  
B
BM  
Emitter Current  
− Continuous  
− Peak (Note 1)  
I
18  
36  
E
EM  
MJE13009G  
AY WW  
Total Device Dissipation @ T = 25_C  
P
P
2
16  
W
C
D
D
Derate above 25°C  
W/_C  
W
W/_C  
_C  
Total Device Dissipation @ T = 25_C  
100  
800  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to  
+150  
J
stg  
A
Y
= Assembly Location  
= Year  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
62.5  
1.25  
275  
Unit  
_C/W  
_C/W  
_C  
WW = Work Week  
= Pb−Free Package  
G
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
L
R
q
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
Device  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJE13009  
MJE13009G  
TO−220  
50 Units / Rail  
50 Units / Rail  
TO−220  
(Pb−Free)  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
MJE13009/D  
 
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中文翻译

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MJE13009G 替代型号

型号 品牌 替代类型 描述 数据表
MJE13009 STMICROELECTRONICS

类似代替

 SILICON NPN SWITCHING TRANSISTOR
MJE13009 ONSEMI

类似代替

 NPN SILICON POWER TRANSISTOR
ST13009 STMICROELECTRONICS

功能相似

 High voltage fast-switching NPN power transistor

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