Datasheet > MJE13009G-P-TA3-T

MJE13009G-P-TA3-T

更新时间： 2024-12-01 14:53:43

品牌	Logo	应用领域
友顺 - UTC		局域网开关晶体管
页数	文件大小	规格书
9页	424K
描述
Power Bipolar Transistor

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技术参数
数据手册

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MJE13009G-P-TA3-T 技术参数

生命周期：	Active	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.59
最大集电极电流 (IC)：	12 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4 MHz	Base Number Matches：	1

MJE13009G-P-TA3-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD

MJE13009-P

NPN SILICON TRANSISTOR

SWITCHMODE SERIES NPN

SILICON POWER

TRANSISTORS

DESCRIPTION

The MJE13009-P is designed for high-voltage, high-speed

power switching inductive circuits where fall time is critical. They

are particularly suited for 115 and 220V switch mode applications

such as Switching Regulators, Inverters, Motor Controls,

Solenoid/Relay drivers and Deflection circuits.

FEATURES

* V_CEO400V and 300 V

* Reverse Bias SOA with Inductive Loads @ T_C= 100°C

* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C

t_C@ 8 A, 100°C is 120 ns (Typ).

* 700 V Blocking Capability

* SOA and Switching Applications Information.

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free

Halogen Free

MJE13009L-P-T3P-T

MJE13009L-P-TA3-T

MJE13009G-P-T3P-T

MJE13009G-P-TA3-T

TO-3P

Tube

TO-220

www.unisonic.com.tw

1 of 9

QW-R223-008, A

12 3 4 5 6 7...9

中文翻译

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