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ST13009 PDF预览

ST13009

更新时间: 2024-11-30 04:02:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
11页 172K
描述
High voltage fast-switching NPN power transistor

ST13009 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.22Is Samacsys:N
最大集电极电流 (IC):12 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ST13009 数据手册

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ST13009  
High voltage fast-switching  
NPN power transistor  
Features  
Low spread of dynamic parameters  
High voltage capability  
Minimum lot-to-lot spread for reliable operation  
Very high switching speed  
3
Applications  
2
1
Switch mode power supplies  
TO-220  
Description  
The device is manufactured using high voltage  
multi-epitaxial planar technology for high  
switching speeds and medium voltage capability.  
It uses a Hollow emitter structure to enhance  
switching speeds.  
Figure 1.  
Internal schematic diagram  
Table 1.  
Device summary  
Marking (1)  
Order code  
Package  
Packaging  
13009 L  
13009 H  
ST13009  
TO-220  
Tube  
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either  
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.  
August 2007  
Rev 2  
1/11  
www.st.com  
11  

ST13009 替代型号

型号 品牌 替代类型 描述 数据表
MJE13009G ONSEMI

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12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
FJP13009H2TU FAIRCHILD

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High Voltage Fast-Switching NPN Power Transistor

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