MJE13009

更新时间： 2024-11-04 22:46:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
10页	453K
描述
NPN SILICON POWER TRANSISTOR

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数据手册
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MJE13009 数据手册

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SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

12 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

The MJE13009 is designed for high–voltage, high–speed power switching inductive

circuits where fall time is critical. They are particularly suited for 115 and 220 V

switchmode applications such as Switching Regulators, Inverters, Motor Controls,

Solenoid/Relay drivers and Deflection circuits.

100 WATTS

SPECIFICATION FEATURES:

•

400 V and 300 V

CEO(sus)

Reverse Bias SOA with Inductive Loads @ T = 100 C

Inductive Switching Matrix 3 to 12 Amp, 25 and 100 C

. . . t @ 8 A, 100 C is 120 ns (Typ).

•

700 V Blocking Capability

SOA and Switching Applications Information.

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

400

700

CEO(sus)

CEV

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

— Peak (1)

Adc

Emitter Current — Continuous

— Peak (1)

Total Power Dissipation @ T = 25 C

Watts

mW/ C

Derate above 25 C

Total Power Dissipation @ T = 25 C

Derate above 25 C

100

800

Watts

mW/ C

Operating and Storage Junction Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

62.5

1.25

275

Unit

C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

θJC

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

REV 2

3_M–6_ot7_o6_{rola, Inc. 1995}

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...10

中文翻译

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MJE13009 替代型号

型号	品牌	替代类型	描述	数据表
MJE13009G	ONSEMI	类似代替	12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
FJP13009TU	FAIRCHILD	功能相似	High Voltage Fast-Switching NPN Power Transistor
FJP13009H2TU	FAIRCHILD	功能相似	High Voltage Fast-Switching NPN Power Transistor

与MJE13009相关器件

型号	品牌	获取价格	描述	数据表
MJE13009_06	ONSEMI	获取价格	12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
MJE13009_12	UTC	获取价格	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE13009_15	UTC	获取价格	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE1300916	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE1300916A	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009A	MOTOROLA	获取价格	12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009A	NJSEMI	获取价格	Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220
MJE13009AF	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009AJ	MOTOROLA	获取价格	12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009C	MOTOROLA	获取价格	暂无描述

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