Datasheet > MJE13009_06

MJE13009_06

更新时间： 2024-09-23 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	148K
描述
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS

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MJE13009_06 数据手册

MJE13009

Preferred Device

SWITCHMODEt Series

NPN Silicon Power

Transistors

The MJE13009 is designed for high−voltage, high−speed power

switching inductive circuits where fall time is critical. They are

particularly suited for 115 and 220 V SWITCHMODE applications

such as Switching Regulators, Inverters, Motor Controls,

Solenoid/Relay drivers and Deflection circuits.

http://onsemi.com

12 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS − 100 WATTS

Features

• V

400 V and 300 V

CEO(sus)

• Reverse Bias SOA with Inductive Loads @ T = 100_C

• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t @ 8 A,

100_C is 120 ns (Typ)

• 700 V Blocking Capability

• SOA and Switching Applications Information

• Pb−Free Package is Available*

MAXIMUM RATINGS

TO−220AB

CASE 221A−09

Rating

Collector−Emitter Voltage

Emitter−Base Voltage

Symbol

Value

400

700

Unit

Vdc

Adc

STYLE 1

CEO(sus)

CEV

EBO

MARKING DIAGRAM

Collector Current − Continuous

− Peak (Note 1)

Base Current

− Continuous

− Peak (Note 1)

Adc

Emitter Current

− Continuous

− Peak (Note 1)

MJE13009G

AY WW

Total Device Dissipation @ T = 25_C

Derate above 25°C

W/_C

Total Device Dissipation @ T = 25_C

100

800

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to

+150

stg

= Assembly Location

= Year

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

62.5

1.25

275

Unit

_C/W

WW = Work Week

= Pb−Free Package

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

ORDERING INFORMATION

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

Device

Package

Shipping

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MJE13009

MJE13009G

TO−220

50 Units / Rail

TO−220

(Pb−Free)

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 7

MJE13009/D

12 3 4 5 6 7...10

中文翻译

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与MJE13009_06相关器件

型号	品牌	获取价格	描述	数据表
MJE13009_12	UTC	获取价格	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE13009_15	UTC	获取价格	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE1300916	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE1300916A	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009A	MOTOROLA	获取价格	12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009A	NJSEMI	获取价格	Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220
MJE13009AF	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009AJ	MOTOROLA	获取价格	12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009C	MOTOROLA	获取价格	暂无描述
MJE13009D	UTC	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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