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MJE13009 PDF预览

MJE13009

更新时间: 2024-09-22 22:46:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管局域网
页数 文件大小 规格书
6页 81K
描述
SILICON NPN SWITCHING TRANSISTOR

MJE13009 数据手册

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MJE13009  
SILICON NPN SWITCHING TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
DESCRIPTION  
The MJE13009 is a multiepitaxial mesa NPN  
transistor. It is mounted in Jedec TO-220 plastic  
package, intended for use in motor controls,  
switching regulators, deflection circuits, etc.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
VCEV  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (IB = 0)  
Collector-Emitter Voltage (VBE = -1.5 V)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
400  
V
V
700  
9
V
12  
A
ICM  
Collector Peak Current (tp 10 ms)  
Base Current  
24  
A
IB  
6
12  
A
IBM  
Base Peak Current (tp 10 ms)  
Emitter Current  
A
IE  
18  
A
IEM  
Emitter Peak Current  
Total Power Dissipation at Tc 25 oC  
36  
A
Ptot  
Tstg  
Tj  
100  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
September1997  

MJE13009 替代型号

型号 品牌 替代类型 描述 数据表
MJE13009G ONSEMI

类似代替

12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
TIP47 MOTOROLA

功能相似

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