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FJP3305R

更新时间: 2024-11-05 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关高压
页数 文件大小 规格书
5页 78K
描述
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

FJP3305R 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.7
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):19
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

FJP3305R 数据手册

 浏览型号FJP3305R的Datasheet PDF文件第2页浏览型号FJP3305R的Datasheet PDF文件第3页浏览型号FJP3305R的Datasheet PDF文件第4页浏览型号FJP3305R的Datasheet PDF文件第5页 
FJP3305  
High Voltage Switch Mode Application  
High Speed Switching  
Suitable for Electronic Ballast and Switching Regulator  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
700  
V
V
CBO  
CEO  
EBO  
400  
9
V
I
I
I
4
A
C
8
A
CP  
B
2
75  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
I =500µA, I =0  
Min.  
Typ.  
Max.  
Units  
V
BV  
700  
400  
9
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
V
C
B
I =500µA, I =0  
V
E
C
I
I
V
=700V, I =0  
1
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
CE  
E
Emitter Cut-off Current  
V
V
V
=9V, I =0  
1
C
h
h
*
DC Current Gain  
=5V, I =1A  
19  
8
35  
40  
0.5  
0.6  
1
FE1  
FE2  
C
=5V, I =2A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =1A, I =0.2A  
V
V
CE  
BE  
C
B
I =2A, I =0.5A  
C
B
I =4A, I =1A  
V
C
B
V
(sat)  
I =1A, I =0.2A  
1.2  
1.6  
V
C
B
I =2A, I =0.5A  
V
C
B
f
Current Gain Bandwidth Product  
Output Capacitance  
Turn On Time  
V
=5V, I =1A  
4
MHz  
pF  
µs  
µs  
µs  
T
CE  
CB  
CC  
C
C
V
V
=10V, f=1MHz  
65  
ob  
t
t
t
=125V,  
0.8  
4
ON  
I =2A=5I =-5I  
Storage Time  
C
B1  
B2  
STG  
R =62.5Ω  
L
Fall Time  
0.9  
F
* Pulse test: PW300µs, Duty Cycle2%  
h
Classification  
FE  
Classification  
R
O
h
19 ~ 28  
26 ~ 35  
FE2  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  

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