FJP5027TU

更新时间： 2024-11-27 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
5页	61K
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中文翻译

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数据手册

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FJP5027TU 数据手册

FJP5027

High Voltage and High Reliability

•

High Speed Switching

Wide SOA

TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

1100

CBO

CEO

EBO

800

1.5

Collector Dissipation ( T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

= 1mA, I = 0

1100

800

CBO

CEO

EBO

= 5mA, I = 0

= 1mA, I = 0

(sus)

I = 1.5A, I = -I = 0.3A

800

CEX

L = 2mH, Clamped

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

= 800V, I = 0

µA

CBO

EBO

= 5V, I = 0

= 5V, I = 0.2A

FE1

FE2

= 5V, I = 1A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

= 1.5A, I = 0.3A

1.5

= 10V, I = 0, f = 1MHz

MHz

µs

Current Gain Bandwidth Product

Turn On Time

= 10V, I = 0.2A

= 400V

0.5

= 5I = -2.5I = 2A

Storage Time

B1 B2

µs

STG

R = 200Ω

Fall Time

0.3

µs

Classification

10 ~ 20

15 ~ 30

20 ~ 40

FE1

Rev. A, December 2003

12 3 4 5

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