FJP5304D

更新时间： 2024-11-24 22:31:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关高压
页数	文件大小	规格书
6页	82K
描述
High Voltage High Speed Power Switch Application

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中文翻译

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数据手册

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FJP5304D 数据手册

FJP5304D

Equivalent Circuit

High Voltage High Speed Power Switch

Application

•

Wide Safe Operating Area

Built-in Free Wheeling diode

Suitable for Electronic Ballast Application

Small Variance in Storage Time

TO-220

1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

* Collector Current (Pulse)

Base Current (DC)

700

CBO

CEO

EBO

400

* Base Current (Pulse)

Collector Dissipation (T =25°C)

°C

Storage Temperature

- 65 ~ 150

STG

* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

= 1mA, I = 0

700

400

CBO

CEO

EBO

= 5mA, I = 0

= 1mA, I = 0

= 700V, V = 0

100

250

100

CES

Collector Cut-off Current

= 400V, IB = 0

CEO

EBO

Emitter Cut-off Current

= 12V, I = 0

DC Current Gain

= 5V, I = 10mA

= 5V, I = 2A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Internal Diode Forward Voltage Drop

= 0.5A, I = 0.1A

0.7

1.0

1.5

= 1A, I = 0.2A

= 2.5A, I = 0.5A

= 0.5A, I = 0.1A

1.1

1.2

1.3

= 1A, I = 0.2A

= 2.5A, I = 0.5A

= 2A

2.5

Rev. A, May 2003

12 3 4 5 6

中文翻译

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