是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | LEAD FREE, TO-220, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 5.78 |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 5 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 80 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FJP13007TU | ONSEMI |
完全替代 |
NPN芯片晶体管 | |
MJE13007G | ONSEMI |
完全替代 |
NPN Bipolar Power Transistor For Switching Power Supply Applications |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FJP3835 | FAIRCHILD |
获取价格 |
Power Amplifier | |
FJP3835TU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
FJP5021 | FAIRCHILD |
获取价格 |
High Voltage and High Reliability | |
FJP5021O | FAIRCHILD |
获取价格 |
暂无描述 | |
FJP5021OTU | ROCHESTER |
获取价格 |
5A, 500V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN | |
FJP5021Y | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
FJP5027 | FAIRCHILD |
获取价格 |
High Voltage and High Reliability | |
FJP5027N | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
FJP5027O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
FJP5027OTU | FAIRCHILD |
获取价格 |
NPN Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL |