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MJE13007G PDF预览

MJE13007G

更新时间： 2024-09-26 10:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管功率双极晶体管PC局域网
页数 文件大小 规格书
10页 190K
描述
NPN Bipolar Power Transistor For Switching Power Supply Applications

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中文翻译

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MJE13007G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.36Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：225700
Samacsys Pin Count：3Samacsys Part Category：Transistor
Samacsys Package Category：Transistor Outline, VerticalSamacsys Footprint Name：TO-220 CASE221A-09
Samacsys Released Date：2015-11-03 12:30:39Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：5JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：80 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：14 MHzBase Number Matches：1

MJE13007G 数据手册

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MJE13007G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE13007G is designed for high−voltage, high−speed power  
switching inductive circuits where fall time is critical. It is particularly  
suited for 115 and 220 V SWITCHMODE applications such as  
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay  
drivers and Deflection circuits.  
http://onsemi.com  
POWER TRANSISTOR  
8.0 AMPERES  
400 VOLTS − 80 WATTS  
Features  
• V  
400 V  
CEO(sus)  
• Reverse Bias SOA with Inductive Loads @ T = 100°C  
C
• 700 V Blocking Capability  
• SOA and Switching Applications Information  
• Standard TO−220  
• These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
Unit  
Vdc  
Vdc  
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
V
CEO  
TO−220AB  
CASE 221A−09  
STYLE 1  
V
CES  
V
EBO  
700  
Emitter−Base Voltage  
9.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak (Note 1)  
I
8.0  
16  
C
I
I
I
CM  
1
2
3
Base Current  
− Continuous  
− Peak (Note 1)  
I
4.0  
8.0  
Adc  
Adc  
B
BM  
Emitter Current  
− Continuous  
− Peak (Note 1)  
I
12  
24  
E
MARKING DIAGRAM  
EM  
Total Device Dissipation @ T = 25_C  
P
D
80  
0.64  
W
W/_C  
C
Derate above 25°C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
−65 to 150  
_C  
J
stg  
MJE13007G  
AY WW  
Characteristics  
Symbol  
Max  
1.56  
62.5  
260  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
A
Y
= Assembly Location  
= Year  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
WW = Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
G
= Pb−Free Package  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*Measurement made with thermocouple contacting the bottom insulated mounting  
surface of the package (in a location beneath the die), the device mounted on a  
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
MJE13007G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 6  
MJE13007/D  
 
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中文翻译

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MJE13007G 替代型号

型号 品牌 替代类型 描述 数据表
MJE13007 ONSEMI

完全替代

 NPN Bipolar Power Transistor For Switching Power Supply Applications
TIP142TTU ONSEMI

类似代替

 NPN Epitaxial Silicon Darlington Transistor, 1000-TUBE
BUL381D STMICROELECTRONICS

功能相似

 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

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