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FJP3305O PDF预览

FJP3305O

更新时间: 2024-12-01 20:49:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
6页 76K
描述
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

FJP3305O 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.7
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):26
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

FJP3305O 数据手册

 浏览型号FJP3305O的Datasheet PDF文件第2页浏览型号FJP3305O的Datasheet PDF文件第3页浏览型号FJP3305O的Datasheet PDF文件第4页浏览型号FJP3305O的Datasheet PDF文件第5页浏览型号FJP3305O的Datasheet PDF文件第6页 
FJP3305  
High Voltage Fast-Switching NPN Power Transistor  
High Voltage Capability  
High Switching Speed  
Suitable for Electronic Ballast and Switching Regulator  
TO-220  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
700  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
400  
9
V
I
I
I
4
A
C
8
2
A
CP  
B
A
P
Collector Dissipation (T = 25°C)  
75  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
-65 ~ 150  
STG  
©2005 Fairchild Semiconductor Corporation  
FJP3305 Rev. B  
1
www.fairchildsemi.com  

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