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FJP3305H2 PDF预览

FJP3305H2

更新时间: 2024-12-01 12:28:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 288K
描述
High Voltage Capability

FJP3305H2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.68Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):26
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

FJP3305H2 数据手册

 浏览型号FJP3305H2的Datasheet PDF文件第2页浏览型号FJP3305H2的Datasheet PDF文件第3页浏览型号FJP3305H2的Datasheet PDF文件第4页浏览型号FJP3305H2的Datasheet PDF文件第5页浏览型号FJP3305H2的Datasheet PDF文件第6页 
October 2008  
FJP3305  
High Voltage Fast-Switching NPN Power Transistor  
High Voltage Capability  
High Switching Speed  
Suitable for Electronic Ballast and Switching Regulator  
TO-220  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
700  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
400  
9
V
4
A
ICP  
8
2
A
IB  
A
PC  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature  
75  
W
°C  
°C  
TJ  
150  
TSTG  
-65 ~ 150  
© 2007 Fairchild Semiconductor Corporation  
FJP3305 Rev. 1.0.0  
www.fairchildsemi.com  
1

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