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FJP3305H2TU PDF预览

FJP3305H2TU

更新时间: 2024-11-05 12:28:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 288K
描述
High Voltage Fast-Switching NPN Power Transistor

FJP3305H2TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:8
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):26JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

FJP3305H2TU 数据手册

 浏览型号FJP3305H2TU的Datasheet PDF文件第2页浏览型号FJP3305H2TU的Datasheet PDF文件第3页浏览型号FJP3305H2TU的Datasheet PDF文件第4页浏览型号FJP3305H2TU的Datasheet PDF文件第5页浏览型号FJP3305H2TU的Datasheet PDF文件第6页 
October 2008  
FJP3305  
High Voltage Fast-Switching NPN Power Transistor  
High Voltage Capability  
High Switching Speed  
Suitable for Electronic Ballast and Switching Regulator  
TO-220  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
700  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
400  
9
V
4
A
ICP  
8
2
A
IB  
A
PC  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature  
75  
W
°C  
°C  
TJ  
150  
TSTG  
-65 ~ 150  
© 2007 Fairchild Semiconductor Corporation  
FJP3305 Rev. 1.0.0  
www.fairchildsemi.com  
1

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