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FJP1943OTU PDF预览

FJP1943OTU

更新时间: 2024-12-02 19:27:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 587K
描述
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

FJP1943OTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.48
最大集电极电流 (IC):17 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):80
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):80 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

FJP1943OTU 数据手册

 浏览型号FJP1943OTU的Datasheet PDF文件第2页浏览型号FJP1943OTU的Datasheet PDF文件第3页浏览型号FJP1943OTU的Datasheet PDF文件第4页浏览型号FJP1943OTU的Datasheet PDF文件第5页浏览型号FJP1943OTU的Datasheet PDF文件第6页 
November 2008  
FJP1943  
PNP Epitaxial Silicon Transistor  
Applications  
High-Fidelity Audio Output Amplifier  
General Purpose Power Amplifier  
Features  
High Current Capability: IC = -15A.  
High Power Dissipation : 80watts.  
High Frequency : 30MHz.  
High Voltage : VCEO= -230V  
Wide S.O.A for reliable operation.  
1
TO-220  
1.Base 2.Collector 3.Emitter  
Excellent Gain Linearity for low THD.  
Complement to FJP5200  
Full thermal and electrical Spice models are available.  
Same transistor is also available in:  
-- TO264 package, 2SA1943/FJL4215 : 150 watts  
-- TO3P package, 2SA1962/FJA4213 : 130 watts  
-- TO220F package, FJPF1943 : 50 watts  
Absolute Maximum Ratings*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-230  
-230  
-5  
Units  
BVCBO  
BVCEO  
BVEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
A
A
-15  
IB  
Base Current  
-1.5  
PD  
Total Device Dissipation(TC=25°C)  
Derate above 25°C  
80  
0.64  
W
W/°C  
TJ, TSTG  
Junction and Storage Temperature  
- 50 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics* Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
RθJC  
Thermal Resistance, Junction to Case  
1.25  
°C/W  
* Device mounted on minimum pad size  
h
Classification  
FE  
Classification  
R
O
hFE1  
55 ~ 110  
80 ~ 160  
© 2008 Fairchild Semiconductor Corporation  
FJP1943 Rev. B  
www.fairchildsemi.com  
1

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