Datasheet > FJP3305_05

FJP3305_05

更新时间： 2024-12-02 03:36:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管高压
页数	文件大小	规格书
6页	80K
描述
High Voltage Fast-Switching NPN Power Transistor

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FJP3305_05 数据手册

FJP3305

High Voltage Fast-Switching NPN Power Transistor

•

High Voltage Capability

High Switching Speed

Suitable for Electronic Ballast and Switching Regulator

TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

700

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

400

Collector Dissipation (T = 25°C)

°C

Junction Temperature

Storage Temperature

150

-65 ~ 150

STG

FJP3305 Rev. B

www.fairchildsemi.com

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
FJP3305H1	FAIRCHILD	获取价格	High Voltage Fast-Switching NPN Power Transistor
FJP3305H1TU	FAIRCHILD	获取价格	High Voltage Fast-Switching NPN Power Transistor
FJP3305H1TU	ROCHESTER	获取价格	4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
FJP3305H1TU	ONSEMI	获取价格	NPN芯片晶体管
FJP3305H2	FAIRCHILD	获取价格	High Voltage Capability
FJP3305H2TU	FAIRCHILD	获取价格	High Voltage Fast-Switching NPN Power Transistor
FJP3305H2TU	ROCHESTER	获取价格	4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
FJP3305H2TU	ONSEMI	获取价格	NPN芯片晶体管
FJP3305O	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
FJP3305R	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast