Datasheet > FJP2160D

FJP2160D

更新时间： 2024-11-05 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
12页	708K
描述
ESBCTM Rated NPN Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FJP2160D 数据手册

May 2012

FJP2160D

ESBC^TMRated NPN Silicon Transistor

Applications

Description

The FJP2160D is a low-cost, high performance power

switch designed to provide the best performance when

used in an ESBC^TMconfiguration in applications such as:

power supplies, motor drivers, Smart Grid, or ignition

switches. The power switch is designed to operate up to

1600 volts and up to 3amps while providing exceptionally

low on-resistance and very low switching losses.

• High Voltage and High Speed Power Switch

Application

• Emitter-Switched Bipolar/MOSFET Cascode

Application (ESBC^TM

)

• Smart Meter, Smart Breakers,

HV Industrial Power Supplies

• Motor Driver and Ignition Driver

The ESBC^TMswitch is designed to be easy to drive using

off-the-shelf power supply controllers or drivers. The

ESBC^TMMOSFET is a low-voltage, low-cost, surface

mount device that combines low-input capacitance and

fast switching, The ESBC^TMconfiguration further mini-

mizes the required driving power because it does not

have Miller capacitance.

ESBC Features (FDC655 MOSFET)

V_CS(ON)

I_C

Equiv R_CS(ON)

0.131 V

0.5 A

0.261 Ω ∗

• Low Equivalent On Resistance

• Very Fast Switch : 150KHz

• Squared RBSOA : Up to 1600Volts

• Avalanche Rated

The FJP2160D provides exceptional reliability and a

large operating range due to its square reverse-bias-safe-

operating-area (RBSOA) and rugged design. The device

is avalanche rated and has no parasitic transistors so is

not prone to static dv/dt failures.

• Low Driving Capacitance, no Miller Capacitance

(Typ 12pF Cap @ 200volts)

• Low Switching Losses

• Reliable HV switch : No False Triggering due to

High dv/dt Transients.

(2)

(3)

FJP2160D

FDC655

(1)

TO-220

1.Base 2.Collector 3.Emitter

Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration**

Figure 1. Pin Configuration

Ordering Information

Part Number

FJP2160DTU

Marking

J2160D

Package

TO-220

Packing Method

Remarks

TUBE

* Figure of Merit

** Other Fairchild MOSFETs can be used in this ESBC application.

www.fairchildsemi.com

FJP2160D Rev. A0

12 3 4 5 6 7...12

中文翻译

下载PDF

与FJP2160D相关器件

型号	品牌	获取价格	描述	数据表
FJP2160DTU	ONSEMI	获取价格	ESBC 额定 NPN 硅晶体管
FJP3305	FAIRCHILD	获取价格	High Voltage Switch Mode Application
FJP3305_05	FAIRCHILD	获取价格	High Voltage Fast-Switching NPN Power Transistor
FJP3305H1	FAIRCHILD	获取价格	High Voltage Fast-Switching NPN Power Transistor
FJP3305H1TU	FAIRCHILD	获取价格	High Voltage Fast-Switching NPN Power Transistor
FJP3305H1TU	ROCHESTER	获取价格	4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
FJP3305H1TU	ONSEMI	获取价格	NPN芯片晶体管
FJP3305H2	FAIRCHILD	获取价格	High Voltage Capability
FJP3305H2TU	FAIRCHILD	获取价格	High Voltage Fast-Switching NPN Power Transistor
FJP3305H2TU	ROCHESTER	获取价格	4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN