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FGA60N60UFD PDF预览

FGA60N60UFD

更新时间: 2024-11-10 06:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
9页 778K
描述
600V, 60A Field Stop IGBT

FGA60N60UFD 数据手册

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February 2009  
FGA60N60UFD  
tm  
600V, 60A Field Stop IGBT  
Features  
General Description  
High current capability  
Using Novel Field Stop IGBT Technology, Fairchild’s new series  
of Field Stop IGBTs offer the optimum performance for Induction  
Heating, UPS, SMPS and PFC applications where low conduc  
tion and switching losses are essential.  
Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A  
High input impedance  
Fast switching  
RoHS compliant  
Applications  
Induction Heating, UPS, SMPS, PFC  
C
G
TO-3P  
E
G
C
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
600  
Units  
VCES  
VGES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
V
V
A
A
A
± 20  
120  
@ TC = 25oC  
@ TC = 100oC  
IC  
ICM (1)  
PD  
Collector Current  
60  
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
Pulsed Collector Current  
180  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
298  
W
W
oC  
oC  
119  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive test , Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RθJC(IGBT)  
RθJC(Diode)  
RθJA  
Parameter  
Typ.  
Max.  
0.33  
1.1  
Units  
oC/W  
oC/W  
oC/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
-
-
-
40  
©2009 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
FGA60N60UFD Rev. A  

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