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FGA50N100BNTTU PDF预览

FGA50N100BNTTU

更新时间: 2024-09-19 06:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
8页 703K
描述
1000V, 50A NPT-Trench IGBT CO-PAK

FGA50N100BNTTU 数据手册

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March 2009  
tm  
FGA50N100BNT  
1000V, 50A NPT-Trench IGBT CO-PAK  
Features  
General Description  
High Speed Switching  
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A  
High Input Impedance  
Trench insulated gate bipolar transistors (IGBTs) with NPT  
technology show outstanding performance in conduction and  
switching characteristics as well as enhanced avalanche  
ruggedness. These devices are well suited for UPS, PFC, I-H  
Jar, induction Heater and Home Appliance.  
RoHS Compliant  
Applications  
UPS, PFC, I-H Jar, Induction Heater, Home Appliance.  
TO-3P  
G
C
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
1000  
± 25  
50  
Units  
VCES  
VGES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
V
V
A
A
A
@ TC = 25oC  
@ TC = 100oC  
IC  
ICM (1)  
PD  
Collector Current  
35  
Pulsed Collector Current  
200  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
@ TC = 25oC  
@ TC = 100oC  
156  
63  
W
W
oC  
oC  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RθJC(IGBT)  
RθJA  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Typ.  
Max.  
0.8  
Units  
oC/W  
oC/W  
-
-
40.0  
©2009 Fairchild Semiconductor Corporation  
FGA50N100BNT Rev. A  
1
www.fairchildsemi.com  

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