Datasheet > FDS8936AF011

FDS8936AF011

更新时间： 2024-09-16 19:54:59

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飞兆/仙童 - FAIRCHILD		/
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FDS8936AF011 数据手册

May 1998

FDS8936A

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

SO-8 N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

6 A, 30 V. R_DS(ON)= 0.028 W @ V_GS= 10 V,

R_DS(ON)= 0.040 W @ V_GS= 4.5 V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

SuperSOT^TM-6

SuperSOT^TM-8

SOIC-16

SOT-23

SO-8

SOT-223

pin 1

SO-8

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol Parameter

FDS8936A

Units

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

(Note 1b)

(Note 1c)

0.9

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDS8936A Rev.B

12 3 4 5 6 7 8

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