Datasheet > FDS8958A

FDS8958A

更新时间： 2024-11-30 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	582K
描述
种类:N+P-Channel;漏源电压（Vdss）:N：30V; P：-30V;持续漏极电流（Id）（在25°C时）:N：7A ; P：-5A;Vgs(th)(V):±20;漏源导通电阻:N：28mΩ ; P： 52mΩ@10V

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FDS8958A 数据手册

FDS8958

UMW

N+P-Channel MOSFET

General Description

These devices are well suited for

P-Channel

low voltage and battery powered

applications where low in-line power

loss and fast switching are required.

N-Channel

Features

N-Channel

SOP-8

_DS(V) = 30V

•

I = 7A (V_GS= 10V)

< 28mΩ (V_GS= 10V)

•

DS(ON)

< 40mΩ (V_GS= 4.5V)

DS(ON)

P-Channel

_DS(V) = -30V

•

I = 5A (V_GS= -10V)

•

R_DS(ON)< 52mΩ (V_GS= -10V)

R_DS(ON)< 80mΩ (V_GS= -4.5V)

•

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Units

N-Channel

Symbol

Parameter

P-Channel

V_DSS

V_GSS

I_D

Drain-Source Voltage

±20

-5

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

-20

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1c)

1.6

0.9

1.6

0.9

E_AS

Single Pulse Avalanche Energy

(Note 3)

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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