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FDS8958

更新时间: 2024-11-28 22:40:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 234K
描述
Dual N & P-Channel PowerTrench MOSFET

FDS8958 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.29Is Samacsys:N
其他特性:FAST SWITCHING配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):7 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS8958 数据手册

 浏览型号FDS8958的Datasheet PDF文件第2页浏览型号FDS8958的Datasheet PDF文件第3页浏览型号FDS8958的Datasheet PDF文件第4页浏览型号FDS8958的Datasheet PDF文件第5页浏览型号FDS8958的Datasheet PDF文件第6页浏览型号FDS8958的Datasheet PDF文件第7页 
October 2004  
FDS8958  
Dual N & P-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
These dual N- and P-Channel enhancement mode  
power field effect transistors are produced using  
Fairchild Semiconductor’s advanced PowerTrench  
process that has been especially tailored to minimize  
on-state ressitance and yet maintain superior switching  
performance.  
·
Q1:  
N-Channel  
7.0A, 30V  
RDS(on) = 0.028W @ VGS = 10V  
RDS(on) = 0.040W @ VGS = 4.5V  
·
Q2:  
P-Channel  
-5A, -30V  
RDS(on) = 0.052W @ VGS = -10V  
RDS(on) = 0.080W @ VGS = -4.5V  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
·
·
Fast switching speed  
High power and handling capability in a widely  
used surface mount package  
Q2  
D2  
5
6
7
8
4
3
2
1
D2  
D1  
D1  
Q1  
G2  
SO-8  
S2  
G1  
S1  
Pin 1  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Q1  
30  
±20  
7
Q2  
30  
Units  
V
V
A
VGSS  
Gate-Source Voltage  
±20  
-5  
ID  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
20  
-20  
PD  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
W
(Note 1a)  
(Note 1b)  
1.6  
1
(Note 1c)  
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
RqJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS8958  
FDS8958  
13”  
12mm  
2500 units  
FDS8958 Rev A(W)  
Ó2004 Fairchild Semiconductor Corporation  

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