Datasheet > FDS8978_07

FDS8978_07

更新时间： 2024-09-15 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	563K
描述
N-Channel PowerTrench㈢ MOSFET

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FDS8978_07 数据手册

May 2007

FDS8978

N-Channel PowerTrench^®MOSFET

30V, 7.5A, 18mΩ

Features

General Description

r_DS(on)= 18mΩ, V_GS= 10V, I_D= 7.5A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(on)= 21mΩ, V_GS= 4.5V, I_D= 6.9A

High performance trench technology for extremely low

r_DS(on)

r_DS(on)and fast switching speed.

Applications

Low gate charge

DC/DC converters

High power and current handling capability

100% Rg Tested

RoHS Compliant

SO-8

Pin 1

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_A= 25^oC, V_GS= 10V, R_θJA= 50^oC/W)

Continuous (T_A= 25^oC, V_GS= 4.5V, R_θJA= 50^oC/W)

Pulsed

7.5

6.9

I_D

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

1.6

P_D

mW/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 150

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case (Note 2)

^oC/W

Thermal Resistance, Junction to Ambient (Note 2a)

Thermal Resistance, Junction to Ambient (Note 2c)

135

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDS8978

SO-8

330mm

12mm

2500 units

FDS8978 Rev. B

www.fairchildsemi.com

12 3 4 5 6 7...11

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