Datasheet > FDS8984-F40

FDS8984-F40

更新时间： 2024-11-19 11:15:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	273K
描述
N 沟道，PowerTrench® MOSFET，30V，7A，23mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDS8984-F40 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

MAX

I MAX

DSS

DS(ON)

30 V

23 mW @ V = 10 V

7.0 A

6.0 A

30 V, 7 A, 23 mW

30 mW @ V = 4.5 V

FDS8984, FDS8984-F40

General Description

This N−Channel MOSFET has been designed specifically to

improve the overall efficiency of dc−dc converters using either

synchronous or conventional switching PWM controllers. It has been

Pin 1

optimized for low gate charge, low R

and fast switching speed.

DS(ON)

SOIC8

CASE 751EB

Features

• Max R

= 23 mW @ V = 10 V, I = 7 A

GS D

DS(ON)

= 30 mW @ V = 4.5 V, I = 6 A

DS(ON)

MARKING DIAGRAM

• Low Gate Charge

• 100% R Tested

• This Device is Pb−Free and Halogen Free

FDS8984

ALYW

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Ratings

Unit

FDS8984

= Specific Device Code

= Assembly Site

= Wafer Lot Number

= Assembly Start Week

Drain Current

− Continuous (Note 1a)

− Pulsed

Single Pulse Avalache Energy (Note 2)

Power Dissipation for Single Operation

Derate Above 25°C

1.6

PIN ASSIGNMENT

mW/°C

°C

T , T

Operating and Storage Temperature

−55 to +150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

N−Channel MOSFET

RqJA

Thermal Resistance, Junction−to−Ambient

°C/W

(Note 1a)

RqJC

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

ORDERING INFORMATION

†

Device

Package

Shipping

FDS8984

SOIC8

2500 /

(Pb−Free)

Tape & Reel

FDS8984−F40

SOIC8

2500 /

(Pb−Free)

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

February, 2022 − Rev. 3

FDS8984/D

12 3 4 5 6 7

中文翻译

下载PDF

与FDS8984-F40相关器件

型号	品牌	获取价格	描述	数据表
FDS914	FS	获取价格	HighâSpeed Switching Diode
FDS914LT1G	FS	获取价格	HighâSpeed Switching Diode
FDS914LT3G	FS	获取价格	HighâSpeed Switching Diode
FDS9400	FAIRCHILD	获取价格	30V P-Channel PowerTrench MOSFET
FDS9400A	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，30V，-3.4A，130mΩ
FDS9400A	FAIRCHILD	获取价格	30V P-Channel PowerTrench MOSFET
FDS9400A_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
FDS9400AD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
FDS9400AL86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
FDS9400AL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal

与FDS8984-F40相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

FDS8984-F40

FDS8984-F40 数据手册

与FDS8984-F40相关器件

与FDS8984-F40相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDS8984-F40

FDS8984-F40 数据手册

与FDS8984-F40相关器件

与FDS8984-F40相关文章

您还可以找

您在本页遇到什么问题？