Datasheet > FDS9431A_10

FDS9431A_10

更新时间： 2024-09-15 06:59:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	359K
描述
P-Channel 2.5V Specified MOSFET

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FDS9431A_10 数据手册

February 2010

FDS9431A_F085

P-Channel 2.5V Specified MOSFET

Features

General Description

This P-Channel 2.5V specified MOSFET is produced

using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process has been

especially tailored to minimize on-state resistance and

yet maintain superior switching performance.

•

-3.5 A, -20 V. R_DS(ON)= 0.130 Ω @ V_GS= -4.5 V

R_DS(ON)= 0.180 Ω @ V_GS= -2.5 V.

• Fast switching speed.

• High density cell design for extremely low R_DS(ON)

Applications

• High power and current handling capability.

• DC/DC converter

• Power management

• Load switch

• Qualified to AEC Q101

• RoHS Compliant

• Battery protection

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

-20

V_GSS

I_D

Gate-Source Voltage

(Note 1a)

Drain Current - Continuous

- Pulsed

-3.5

-18

(Note 1a)

(Note 1b)

P_D

Power Dissipation for Single Operation

2.5

1.2

(Note 1c)

1.0

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

R_q

C/W

Thermal Resistance, Junction-to-Case

R_q

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9431A

FDS9431A_F085

13’’

12mm

2500 units

FDS9431A_F085 Rev. A

www.fairchildsemi.com

12 3 4 5

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