Datasheet > FDS914LT1G

FDS914LT1G

更新时间： 2024-09-14 02:52:03

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	353K
描述
HighâSpeed Switching Diode

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FDS914LT1G 数据手册

SEMICONDUCTOR

FDS914

TECHNICAL DATA

High−Speed Switching

Diode

Features

We declare that the material of product

compliance with RoHS requirements.

MAXIMUM RATINGS

Symbol

Value

100

Unit

Vdc

Rating

Reverse Voltage

SOT–23

Forward Current

200

mAdc

Peak Forward Surge Current

THERMAL CHARACTERISTICS

Characteristic

500

FM(surge)

Symbol

Max

Unit

Total Device Dissipation

FR–5 Board (Note 1.)

225

T = 25 C

Derate above 25 C

MARKING DIAGRAM

1.8

mW/ C

C/W

Thermal Resistance,

Junction to Ambient

556

Total Device Dissipation

300

Alumina Substrate (Note 2.)

T = 25 C

5D = Device Code

Derate above 25 C

2.4

mW/ C

C/W

Thermal Resistance,

Junction to Ambient

417

Junction and Storage

Temperature Range

T , T

–55 to

+150

stg

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

†

Device

Package

Shipping

Characteristic

Symbol

Min

Max

Unit

FDS914LT1G

FDS914LT3G

SOT−23

3000/Tape & Reel

OFF CHARACTERISTICS

Reverse Breakdown Voltage

100

–

Vdc

10000/Tape & Reel

(BR)

SOT−23

(I = 100 Adc)

Reverse Voltage Leakage Current

(V = 20 Vdc)

(V = 75 Vdc)

–

5.0

nAdc

Adc

Diode Capacitance

(V = 0, f = 1.0 MHz)

–

4.0

1.0

4.0

Vdc

Forward Voltage

(I = 10 mAdc)

Reverse Recovery Time

(I = I = 10 mAdc) (Figure 1)

1. FR–5 = 1.0

0.75 0.062 in.

2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.

2009. 04. 20

Revision No : 0

1/3

12 3

中文翻译

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