是否无铅: | 不含铅 | 生命周期: | Lifetime Buy |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
风险等级: | 7.19 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 3.5 A |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.13 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS9431AL86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
FDS9431A-TF085 | ONSEMI |
获取价格 |
P 沟道,2.5V 指定,MOSFET,-20V,-3.5A,130mΩ | |
FDS9435A | FAIRCHILD |
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Single P-Channel Enhancement Mode Field Effect Transistor | |
FDS9435A | ROCHESTER |
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5300mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SO-8 | |
FDS9435A | ONSEMI |
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P 沟道,PowerTrench® MOSFET,30V,-5.3A,50mΩ | |
FDS9435A | UMW |
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种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C | |
FDS9435AL86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal | |
FDS9435AL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal | |
FDS9435A-NBAD008 | FAIRCHILD |
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Transistor | |
FDS9435A-NBAD008 | ONSEMI |
获取价格 |
P 沟道,PowerTrench® MOSFET,30V,-5.3A,50mΩ |