Datasheet > FDS8984

FDS8984

更新时间： 2024-09-17 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	627K
描述
种类:N+N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:7A;Vgs(th)(V):±20;漏源导通电阻:23mΩ@10V

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FDS8984 数据手册

UMW

FDS8984

30V Dual N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of

DC/DC converters using either synchronous

or conventional switching PWM controllers.

It has been optimized for low gate charge, low

r_DS(ON)and fast switching speed.

Features

•

VDS (V) = 30V

(V_GS= 10V)

•

ID = 7A

23m

RDS(ON) ＜

Ω(V

=10V)

30 m

Ω(V

RDS(ON) ＜

•

=4.5V)

Low gate charge

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous

Pulsed

±20

(Note 1a)

(Note 2)

I_D

E_AS

P_D

Single Pulse Avalache Energy

Power Dissipation for Single Operation

Derate above 25°C

1.6

mW/°C

°C

T_J, T_STG

Operating and Storage Temperature

-55 to 150

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

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