Datasheet > FDS8984_10

FDS8984_10

更新时间： 2024-09-16 06:59:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	441K
描述
N-Channel PowerTrench MOSFET

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数据手册

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FDS8984_10 数据手册

Fabruary 2010

FDS8984_F085

N-Channel PowerTrench^®MOSFET

30V, 7A, 23mΩ

General Description

Features

Max r_DS(on)= 23mΩ, V_GS= 10V, I_D= 7A

Max r_DS(on)= 30mΩ, V_GS= 4.5V, I_D= 6A

Low gate charge

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(ON)and fast switching speed.

100% R_Gtested

Qualified to AEC Q101

RoHS Compliant

SO-8

Pin 1

MOSFET Maximum Ratings ^T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous

Pulsed

±20

(Note 1a)

(Note 2)

I_D

E_AS

P_D

Single Pulse Avalache Energy

Power Dissipation for Single Operation

Derate above 25°C

1.6

mW/°C

°C

T_J, T_STG

Operating and Storage Temperature

-55 to 150

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

FDS8984

FDS8984_F085

SO-8

330mm

2500 units

FDS8984_F085 Rev. A

www.fairchildsemi.com

12 3 4 5 6

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