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FDS8984 PDF预览

FDS8984

更新时间: 2024-11-06 04:18:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 364K
描述
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm

FDS8984 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.1
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1034796Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SOIC8 CASE 751EBSamacsys Released Date:2019-09-30 02:41:06
Is Samacsys:N雪崩能效等级(Eas):32 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.032 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.6 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS8984 数据手册

 浏览型号FDS8984的Datasheet PDF文件第2页浏览型号FDS8984的Datasheet PDF文件第3页浏览型号FDS8984的Datasheet PDF文件第4页浏览型号FDS8984的Datasheet PDF文件第5页浏览型号FDS8984的Datasheet PDF文件第6页 
February 2006  
FDS8984  
N-Channel PowerTrench® MOSFET  
30V, 7A, 23mΩ  
General Description  
Features  
„ Max rDS(on) = 23m, VGS = 10V, ID = 7A  
„ Max rDS(on) = 30m, VGS = 4.5V, ID = 6A  
„ Low gate charge  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM  
controllers. It has been optimized for low gate charge, low  
rDS(ON) and fast switching speed.  
„ 100% RG tested  
„ RoHS Compliant  
D2  
D2  
5
6
7
8
4
3
2
1
D1  
D1  
Q2  
Q1  
G2  
SO-8  
S2  
G1  
S1  
Pin 1  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current Continuous  
Pulsed  
30  
V
V
±20  
(Note 1a)  
(Note 2)  
7
30  
A
ID  
A
EAS  
PD  
Single Pulse Avalache Energy  
32  
mJ  
W
Power Dissipation for Single Operation  
Derate above 25°C  
1.6  
13  
mW/°C  
°C  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 150  
Thermal Characteristics  
RθJA  
RθJC  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
12mm  
Quantity  
FDS8984  
FDS8984  
SO-8  
330mm  
2500 units  
©2006 Fairchild Semiconductor Corporation  
FDS8984 Rev. A  
1
www.fairchildsemi.com  

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