Datasheet > FDS8960C_0511

FDS8960C_0511

更新时间： 2024-11-29 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	157K
描述
Dual N & P-Channel PowerTrench㈢ MOSFET

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FDS8960C_0511 数据手册

November 2005

FDS8960C

Dual N & P-Channel PowerTrench^®MOSFET

General Description

Features

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state ressitance and yet maintain superior switching

performance.

•

Q1:

N-Channel

7.0A, 35V

_DS(on)= 0.024Ω @ V_GS= 10V

R_DS(on)= 0.032Ω @ V_GS= 4.5V

•

Q2:

P-Channel

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

–5A, –35V

_DS(on)= 0.053Ω @ V_GS= –10V

R_DS(on)= 0.087Ω @ V_GS= –4.5V

•

Fast switching speed

RoHS compliant

SO-8

Pin 1

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

±20

–35

–40

±25

–5

V_{DS(Avalanche)}

V_GSS

Drain-Source Avalanche Voltage (maximum) (Note 3)

Gate-Source Voltage

I_D

Drain Current - Continuous

- Pulsed

(Note 1a)

–20

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

0.9

(Note 1c)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS8960C

13”

12mm

2500 units

www.fairchildsemi.com

FDS8960C Rev C1(W)

12 3 4 5 6 7 8

中文翻译

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