Datasheet > FDS8978

FDS8978

更新时间： 2024-11-30 11:13:27

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
15页	384K
描述
N 沟道，PowerTrench® MOSFET，30V，7.5A，18mΩ

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FDS8978 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

MAX

I MAX

DSS

DS(on)

30 V

18 mW @ 10 V

21 mW @ 4.5 V

7.5 A

30 V, 7.5 A, 18 mW

FDS8978, FDS8978-F40

General Description

This N−Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using either

synchronous or conventional switching PWM controllers. It has been

Pin 1

SOIC8

CASE 751EB

optimized for low gate charge, low r

and fast switching speed.

DS(on)

Features

• r

= 18 mW, V = 10 V, I = 7.5 A

GS D

DS(on)

MARKING DIAGRAM

= 21 mW, V = 4.5 V, I = 6.9 A

• High Performance Trench Technology for Extremely Low r

• Low Gate Charge

DS(on)

FDS8978

ALYW

• High Power and Current Handling Capability

• 100% Rg Tested

• These Devices are Pb−Free and are RoHS Compliant

FDS8978 = Device Code

Applications

= Assembly Site

• DC/DC Converters

= Wafer Lot Number

= Assembly Start Week

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Ratings

Unit

PIN CONNECTIONS

DSS

Drain

Continuous (T = 25°C,

7.5

Current

= 10 V, R

= 50°C/W)

Continuous (T = 25°C,

6.9

= 4.5 V, R

= 50°C/W)

Pulsed

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

1.6

Derate above 25°C

mW/°C

°C

T , T

Operating and Storage Temperature

–55 to 150

STG

ORDERING INFORMATION

See detailed ordering and shipping information on page 13 of

this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Starting T = 25°C, L = 1 mH, I = 7.5 A, V = 30 V, V = 10 V.

Publication Order Number:

February, 2022 − Rev. 3

FDS8978/D

12 3 4 5 6 7...15

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