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FDS8958A

更新时间： 2024-11-30 11:15:03
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 598K
描述
双 N 和 P 沟道 PowerTrench® MOSFET 30V

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中文翻译

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FDS8958A 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
Factory Lead Time：1 week风险等级：1.53
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：1006106Samacsys Pin Count：8
Samacsys Part Category：TransistorSamacsys Package Category：Small Outline Packages
Samacsys Footprint Name：SOIC8_8Samacsys Released Date：2019-08-22 10:35:53
Is Samacsys：N雪崩能效等级（Eas）：54 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.028 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM)：20 A表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDS8958A 数据手册

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中文翻译

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FDS8958A 替代型号

型号 品牌 替代类型 描述 数据表
IRF7389 INFINEON

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 		双 N 和 P 沟道 PowerTrench® MOSFET 30V
FDS8958AL86Z FAIRCHILD

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