Datasheet > FDS8958A_07

FDS8958A_07

更新时间： 2024-11-29 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	307K
描述
Dual N and P-Channel PowerTrench MOSFET

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FDS8958A_07 数据手册

February 2007

FDS8958A

Dual N & P-Channel PowerTrench^MOSFET

General Description

Features

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state ressitance and yet maintain superior switching

performance.

•

Q1:

N-Channel

7.0A, 30V

R_DS(on)= 0.028Ω @ V_GS= 10V

R_DS(on)= 0.040Ω @ V_GS= 4.5V

•

Q2:

P-Channel

-5A, -30V

R_DS(on)= 0.052Ω @ V_GS= -10V

R_DS(on)= 0.080Ω @ V_GS= -4.5V

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

•

Fast switching speed

High power and handling capability in a widely

used surface mount package

SO-8

Pin 1

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

±20

-5

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

-20

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1c)

1.6

0.9

1.6

0.9

E_AS

Single Pulse Avalanche Energy

(Note 3)

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS8958A

13”

12mm

2500 units

FDS8958A Rev F1(W)

2007 Fairchild Semiconductor Corporation

12 3 4 5 6 7...9

中文翻译

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