生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.75 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 0.052 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS8947AD84Z | FAIRCHILD |
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Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8947AL86Z | FAIRCHILD |
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Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8947AL99Z | FAIRCHILD |
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Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8947AS62Z | FAIRCHILD |
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Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8949 | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrench MOSFET | |
FDS8949 | ONSEMI |
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双 N 沟道,PowerTrench® MOSFET,逻辑电平,40V,6A,29mΩ | |
FDS8949 | UMW |
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种类:N+N-Channel;漏源电压(Vdss):40V;持续漏极电流(Id)(在25° | |
FDS8949_10 | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrench® MOSFE | |
FDS8949_F085 | FAIRCHILD |
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Power Field-Effect Transistor, 6A I(D), 40V, 0.029ohm, 2-Element, N-Channel, Silicon, Meta | |
FDS8949-F085 | ONSEMI |
获取价格 |
双 N 沟道,逻辑电平,PowerTrench® MOSFET,40V,6A,29mΩ |