Datasheet > FDS8949_10

FDS8949_10

更新时间： 2024-11-29 06:59:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	538K
描述
Dual N-Channel Logic Level PowerTrench® MOSFET

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数据手册

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FDS8949_10 数据手册

February 2010

FDS8949_F085

Dual N-Channel Logic Level PowerTrench^®MOSFET

40V, 6A, 29mΩ

Features

General Description

These N-Channel Logic Level MOSFETs are produced

Max r_DS(on)= 29mΩ at V_GS= 10V

Max r_DS(on)= 36mΩ at V_GS= 4.5V

Low gate charge

using

Fairchild

Semiconductor’s

advanced

PowerTrench^®process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

High performance trench technology for extremely low

r_DS(on)

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

High power and current handling capability

Qualified to AEC Q101

Applications

RoHS compliant

Inverter

Power suppliers

SO-8

Pin 1

MOSFET Maximum Ratings ^T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±20

(Note 1a)

(Note 3)

I_D

E_AS

Drain-Source Avalanche Energy

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance-Single operation, Junction to Ambient

(Note 1a)

135

Thermal Resistance-Single operation, Junction to Ambient (Note 1b)

°C/W

Thermal Resistance, Junction to Case

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

2500 units

FDS8949

FDS8949_F085

13’’

12mm

FDS8949_F085 Rev. A

www.fairchildsemi.com

12 3 4 5 6

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