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FDS8949-F085 PDF预览

FDS8949-F085

更新时间: 2024-11-30 11:15:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 612K
描述
双 N 沟道,逻辑电平,PowerTrench® MOSFET,40V,6A,29mΩ

FDS8949-F085 技术参数

是否无铅: 不含铅生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
风险等级:6.9雪崩能效等级(Eas):26 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.029 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS8949-F085 数据手册

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