Datasheet > FDS8949

FDS8949

更新时间： 2024-09-14 17:15:35

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友台半导体 - UMW		/
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描述
种类:N+N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:6A;Vgs(th)(V):±20;漏源导通电阻:29mΩ@10V

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FDS8949 数据手册

FDS8949

UMW

40V Dual N-Channel MOSFET

General Description

These N-channel Logic Level MOSFETS has been

especially tailoredto minimize the on-state resis-

tance and yet maintainsuperior switching

performancehese devices are well suited for low

voltage andbattery powered applications where low

in-line poweross and fast switching are required

Features

•

VDS (V) = 40V

(V_GS= 10V)

29m

ID = 6A

•

RDS(ON) ＜

Ω(V

=10V)

36m

Ω(V

•

=4.5V)

Low gate charge

RoHS compliant

High performance trench technology for extremely low R_DS(ON)

High power and current handling capability

Applications

Inverter

•

Power suppliers

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±20

(Note 1a)

(Note 3)

I_D

E_AS

Drain-Source Avalanche Energy

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance-Single operation, Junction to Ambient

(Note 1a)

135

Thermal Resistance-Single operation, Junction to Ambient (Note 1b)

°C/W

Thermal Resistance, Junction to Case

(Note 1)

www.umw-ic.com

UTD Semiconductor Co.,Limited

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