是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SOIC-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.34 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 6 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.028 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 20 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTMD6N02R2G | ONSEMI |
功能相似 |
Power MOSFET 6.0 Amps, 20 Volts | |
NTMD4N03R2G | ONSEMI |
功能相似 |
Power MOSFET 4 A, 30 V, NâChannel SOâ8 Du | |
FDS9926A | FAIRCHILD |
功能相似 |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS8936AD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Meta | |
FDS8936AF011 | FAIRCHILD |
获取价格 |
暂无描述 | |
FDS8936AL86Z | FAIRCHILD |
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Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Meta | |
FDS8936S | FAIRCHILD |
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Dual N-Channel Enhancement Mode Field Effect Transistor | |
FDS8947A | FAIRCHILD |
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Dual P-Channel Enhancement Mode Field Effect Transistor | |
FDS8947A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8947AD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8947AL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8947AL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta | |
FDS8947AS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta |