5秒后页面跳转
FDS8936A PDF预览

FDS8936A

更新时间: 2024-11-05 22:40:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
4页 232K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

FDS8936A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.34
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):6 A
最大漏极电流 (ID):6 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:20
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS8936A 数据手册

 浏览型号FDS8936A的Datasheet PDF文件第2页浏览型号FDS8936A的Datasheet PDF文件第3页浏览型号FDS8936A的Datasheet PDF文件第4页 
May 1998  
FDS8936A  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
SO-8 N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance  
and provide superior switching performance. These devices  
are particularly suited for low voltage applications such as  
notebook computer power management and other battery  
powered circuits where fast switching, low in-line power loss,  
and resistance to transients are needed.  
6 A, 30 V. RDS(ON) = 0.028 W @ VGS = 10 V,  
RDS(ON) = 0.040 W @ VGS = 4.5 V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely  
used surface mount package.  
Dual MOSFET in surface mount package.  
SuperSOTTM-6  
SuperSOTTM-8  
SOIC-16  
SOT-23  
SO-8  
SOT-223  
5
6
7
8
4
D2  
D2  
D1  
3
2
D1  
G2  
S2  
G1  
pin 1  
SO-8  
1
S1  
Absolute Maximum Ratings TA = 25oC unless otherwise noted  
Symbol Parameter  
FDS8936A  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
VDSS  
VGSS  
ID  
±20  
V
A
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
(Note 1a)  
6
20  
PD  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
W
1.6  
(Note 1b)  
(Note 1c)  
1
0.9  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
78  
40  
°C/W  
°C/W  
(Note 1)  
FDS8936A Rev.B  
© 1998 Fairchild Semiconductor Corporation  

FDS8936A 替代型号

型号 品牌 替代类型 描述 数据表
NTMD6N02R2G ONSEMI

功能相似

Power MOSFET 6.0 Amps, 20 Volts
NTMD4N03R2G ONSEMI

功能相似

Power MOSFET 4 A, 30 V, N−Channel SO−8 Du
FDS9926A FAIRCHILD

功能相似

Dual N-Channel 2.5V Specified PowerTrench MOSFET

与FDS8936A相关器件

型号 品牌 获取价格 描述 数据表
FDS8936AD84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Meta
FDS8936AF011 FAIRCHILD

获取价格

暂无描述
FDS8936AL86Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Meta
FDS8936S FAIRCHILD

获取价格

Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8947A FAIRCHILD

获取价格

Dual P-Channel Enhancement Mode Field Effect Transistor
FDS8947A_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta
FDS8947AD84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta
FDS8947AL86Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta
FDS8947AL99Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta
FDS8947AS62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Meta