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FDS8934A PDF预览

FDS8934A

更新时间: 2024-11-05 22:40:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 418K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

FDS8934A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.42
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS8934A 数据手册

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May 1998  
FDS8934A  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
SO-8 P-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance  
and provide superior switching performance. These devices  
are particularly suited for low voltage applications such as  
notebook computer power management and other battery  
powered circuits where fast switching, low in-line power loss,  
and resistance to transients are needed.  
-4 A , -20 V, RDS(ON) = 0.055 W @ VGS = -4.5 V,  
RDS(ON) = 0.072 W @ VGS = -2.5 V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely  
used surface mount package.  
Dual MOSFET in surface mount package.  
SuperSOTTM-6  
SuperSOTTM-8  
SOIC-16  
SOT-23  
SO-8  
SOT-223  
D2  
4
5
6
7
8
D2  
D1  
D1  
3
2
1
G2  
S2  
G1  
pin 1  
SO-8  
S1  
Absolute Maximum Ratings TA = 25oC unless otherwise noted  
Symbol Parameter  
FDS8934A  
Units  
Drain-Source Voltage  
-20  
V
VDSS  
VGSS  
ID  
Gate-Source Voltage  
-8  
V
A
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
(Note 1a)  
- 4  
-20  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
1.6  
W
PD  
(Note 1b)  
(Note 1c)  
1
0.9  
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
78  
40  
°C/W  
°C/W  
RqJA  
RqJC  
(Note 1)  
FDS8934A Rev.B  
© 1998 Fairchild Semiconductor Corporation  

FDS8934A 替代型号

型号 品牌 替代类型 描述 数据表
FDS4953 FAIRCHILD

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