Datasheet > FDN342P

FDN342P

更新时间： 2024-11-13 11:13:19

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
8页	288K
描述
P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-2A，80mΩ

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FDN342P 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH^®, Specified

2.5 V

SOT−23/SUPERSOT−3

CASE 527AG

FDN342P

General Description

This P−Channel 2.5 V specified MOSFET is produced in a rugged

gate version of onsemi’s advanced POWERTRENCH process. It has

been optimized for power management applications for a wide range

of gate drive voltages (2.5 V − 12 V).

Applications

• Load Switch

• Battery Protection

• Power Management

MARKING DIAGRAM

XXXMG

Features

• −2 A, −20 V

♦ R

= 0.08 W @ V = −4.5 V

DS(ON)

XXX = Specific Device Code

= 0.13 W @ V = −2.5 V

DS(ON)

= Month Code

= Pb−Free Package

• Rugged gate rating ( 12 V).

• High Performance Trench Technology for Extremely Low R

• Enhanced power SUPERSOTt−3 (SOT−23)

DS(ON)

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Publication Order Number:

March, 2022 − Rev. 3

FDN342P/D

12 3 4 5 6 7 8

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FDN342P 替代型号

型号	品牌	替代类型	描述	数据表
FDN340P	ONSEMI	类似代替	单 P 沟道，逻辑电平，PowerTrench® MOSFET，-20V，-2A，70mΩ
FDN342P	FAIRCHILD	功能相似	P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDN340P	FAIRCHILD	功能相似	Single P-Channel, Logic Level, PowerTrench MOSFET

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