Datasheet > FDN352AP

FDN352AP

更新时间： 2024-09-26 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	408K
描述
种类:P-Channel;漏源导通电阻:-30V;持续漏极电流（Id）（在25°C时）:-1.3A;Vgs(th)(V):±25;漏源导通电阻:180mΩ@-10V

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FDN352AP 数据手册

FDN352

P-Channel 30 V (D-S) MOSFET

UMW

General Description

SOT–23

These devices are well suited for low voltage and battery pow-

ered applications where low in-line power loss is needed in a

very small outline surface mount package.

1. GATE

2. SOURCE

3. DRAIN

Features

■ –1.3 A, –30V

= 180 mΩ @ V = –10V

DS(ON)

–1.1 A, –30V

= 300 mΩ @ V = –4.5V

■ High performance trench technology for extremely low

DS(ON)

■ High power version of industry Standard SOT-23 package.

Identical pin-out to SOT-23 with 30% higher power handling

capability.

Applications

■ Notebook computer power management

Absolute Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

–30

DSS

GSS

Drain Current

– Continuous

– Pulsed

(Note 1a)

–1.3

–10

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.5

0.46

T , T

Operating and Storage Junction Temperature Range

–55 to +150

°C

STG

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

θJA

θJC

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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