型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDN359AN_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
FDN359AND87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
FDN359AN-F095 | FAIRCHILD |
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Transistor | |
FDN359BN | TYSEMI |
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SuperSOT-3 | |
FDN359BN | FAIRCHILD |
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N-Channel Logic Level PowerTrench TM MOSFET | |
FDN359BN | ONSEMI |
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N 沟道逻辑电平 PowerTrench® MOSFET 30V,2.7A,46mΩ | |
FDN359BN | UMW |
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
FDN359BN-F095 | FAIRCHILD |
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N-Channel Logic Level PowerTrenchTM MOSFET | |
FDN360 | FAIRCHILD |
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Single P-Channel PowerTrenchTM MOSFET | |
FDN360P | ONSEMI |
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PowerTrench MOSFET,单 P 沟道 |