5秒后页面跳转
FDN359AN PDF预览

FDN359AN

更新时间: 2024-11-12 12:49:47
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
2页 438K
描述
SuperSOT -3

FDN359AN 数据手册

 浏览型号FDN359AN的Datasheet PDF文件第2页 
Product specification  
FDN359AN  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced  
2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V  
RDS(ON) = 0.060 W @ VGS = 4.5 V.  
using  
Fairchild  
Semiconductor's  
advanced  
PowerTrench process that has been especially tailored  
to minimize on-state resistance and yet maintain  
superior switching performance.  
Very fast switching.  
Low gate charge (5nC typical).  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
High power version of industry standard SOT-23  
package. Identical pin out to SOT-23 with 30% higher  
power handling capability.  
SuperSOTTM-8  
SuperSOTTM-6  
SOT-23  
SO-8  
SOIC-16  
SOT-223  
D
D
S
S
G
SuperSOTTM-3  
G
Absolute Maximum Ratings TA = 25oC unless other wise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Ratings  
30  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Maximum Drain Current - Continuous  
- Pulsed  
±20  
V
(Note 1a)  
2.7  
A
15  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
0.5  
W
0.46  
-55 to 150  
TJ,TSTG  
Operating and Storage Temperature Range  
°C  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
250  
75  
°C/W  
°C/W  
(Note 1)  
http://www.twtysemi.com  
1 of 2  
4008-318-123  

与FDN359AN相关器件

型号 品牌 获取价格 描述 数据表
FDN359AN_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDN359AND87Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDN359AN-F095 FAIRCHILD

获取价格

Transistor
FDN359BN TYSEMI

获取价格

SuperSOT-3
FDN359BN FAIRCHILD

获取价格

N-Channel Logic Level PowerTrench TM MOSFET
FDN359BN ONSEMI

获取价格

N 沟道逻辑电平 PowerTrench® MOSFET 30V,2.7A,46mΩ
FDN359BN UMW

获取价格

种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时
FDN359BN-F095 FAIRCHILD

获取价格

N-Channel Logic Level PowerTrenchTM MOSFET
FDN360 FAIRCHILD

获取价格

Single P-Channel PowerTrenchTM MOSFET
FDN360P ONSEMI

获取价格

PowerTrench MOSFET,单 P 沟道