Datasheet > FDN358P

FDN358P

更新时间： 2024-11-12 12:49:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
2页	207K
描述
SuperSOT-3

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中文翻译

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数据手册

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FDN358P 数据手册

SMD Type

Product specification

FDN358P

General Description

Features

-1.5 A, -30 V, R_DS(ON)= 0.125 W @ V_GS= -10 V

SuperSOT^TM-3 P-Channel logic level enhancement mode

power field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. These devices are particularly suited for

low voltage applications in notebook computers, portable

phones, PCMCIA cards, and other battery powered circuits

where fast switching, and low in-line power loss are needed

in a very small outline surface mount package.

R_DS(ON)= 0.20 W @ V_GS= - 4.5 V.

High power version of industry SOT-23 package: identical

pin out to SOT-23; 30% higher power handling capability.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

SuperSOT^TM-8

SuperSOT^TM-6

SuperSOT^TM-3

SOIC-16

SO-8

SOT-223

SuperSOT^TM-3

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol Parameter

FDN358P

-30

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Drain/Output Current - Continuous

- Pulsed

-1.5

-5

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

°C

P_D

0.46

Operating and Storage Temperature Range

-55 to 150

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

250

°C/W

R_q_JA

R_q_JC

(Note 1)

http://www.twtysemi.com

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4008-318-123

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FDN359AN	TYSEMI	获取价格	SuperSOT -3
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FDN359AN	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
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