Datasheet > FDN352AP

FDN352AP

更新时间： 2024-02-10 13:22:16

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	221K
描述
单 P 沟道，PowerTrench® MOSFET，-30V，-1.3A，180mΩ

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FDN352AP 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Single, P-Channel,

POWERTRENCH⁾

MAX

I MAX

DSS

DS(ON)

−30 V

180 mW @ −10 V

300 mW @ −4.5 V

−1.3 A

−1.1 A

FDN352AP

General Description

This P−Channel Logic Level MOSFET is produced using onsemi

advanced POWERTRENCH process that has been especially tailored

to minimize the on−state resistance and yet maintain low gate charge

for superior switching performance.

These devices are well suited for low voltage and battery powered

applications where low in−line power loss is needed in a very small

outline surface mount package.

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

Features

MARKING DIAGRAM

52APM

• −1.3 A, −30 V

• −1.1 A, −30 V

• High Performance Trench Technology for Extremely Low R

= 180 mW @ V = −10 V

DS(ON)

= 300 mW @ V = −4.5 V

DS(ON)

• High Power Version of Industry Standard SOT−23 Package. Identical

Pin−out to SOT−23 with 30% Higher Power Handling Capability

• This Device is Pb−Free, Halide Free and is RoHS Compliant

52AP = Specific Device Code

= Date Code

Applications

PIN ASSIGNMENT

• Notebook Computer Power Management

ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Drain−Source Voltage

Value

−30

Unit

DSS

GSS

Gate−Source Voltage

Drain Current

Continuous (Note 1a)

Pulsed

−1.3

−10

Power Dissipation

for Single Operation

(Note 1a)

0.5

(Note 1b)

0.46

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

T , T

Operating and Storage Junction

Temperature Range

−55 to 150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Max

Unit

Thermal Resistance, Junction−to−Ambient

(Note 1a)

250

°C/W

Thermal Resistance, Junction−to−Case

(Note 1)

1. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins R

is guaranteed by design while R

is determined by the user’s board design.

a. R

b. R

= 250°C/W when mounted on a 0.02 in pad of 2 oz. copper.

= 270°C/W when mounted on a 0.001 in pad of 2 oz. copper.

Publication Order Number:

July, 2022 − Rev. 3

FDN352AP/D

12 3 4 5 6 7

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