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FDN359

更新时间: 2024-11-11 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 266K
描述
N-Channel Logic Level PowerTrenchTM MOSFET

FDN359 数据手册

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April 1999  
FDN359AN  
N-Channel Logic Level PowerTrenchTM MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced  
2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V  
RDS(ON) = 0.060 W @ VGS = 4.5 V.  
using  
Fairchild  
Semiconductor's  
advanced  
PowerTrench process that has been especially tailored  
to minimize on-state resistance and yet maintain  
superior switching performance.  
Very fast switching.  
Low gate charge (5nC typical).  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
High power version of industry standard SOT-23  
package. Identical pin out to SOT-23 with 30% higher  
power handling capability.  
SuperSOTTM-8  
SuperSOTTM-6  
SOT-23  
SO-8  
SOIC-16  
SOT-223  
D
D
S
S
G
SuperSOTTM-3  
G
Absolute Maximum Ratings TA = 25oC unless other wise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Ratings  
30  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Maximum Drain Current - Continuous  
- Pulsed  
±20  
V
(Note 1a)  
2.7  
A
15  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
0.5  
W
0.46  
-55 to 150  
TJ,TSTG  
Operating and Storage Temperature Range  
°C  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
Thermal Resistance, Junction-to-Case  
250  
75  
°C/W  
°C/W  
(Note 1)  
FDN359AN Rev.C  
© 1999 Fairchild Semiconductor Corporation  

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