Datasheet > FDN360P-NBGT003B

FDN360P-NBGT003B

更新时间： 2024-11-13 11:13:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	281K
描述
PowerTrench MOSFET，单 P 沟道

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中文翻译

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FDN360P-NBGT003B 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Single, P-Channel,

POWERTRENCH⁾

SOT−23

CASE 527AG

FDN360P

General Description

This P−Channel Logic Level MOSFET is produced using onsemi’s

advanced POWERTRENCH process that has been especially tailored

to minimize the on−state resistance and yet maintain low gate charge

for superior switching performance.

These devices are well suited for low voltage and battery powered

applications where low in−line power loss and fast switching are

required.

Features

MARKING DIAGRAM

• −2 A, −30 V

♦ R

= 80 mW @ V = −10 V

DS(ON)

360MG

= 125 mW @ V = −4.5 V

DS(ON)

• Low Gate Charge (6.2 nC Typical)

• High Performance Trench Technology for Extremely Low R

• High Power Version of Industry Standard SOT−23 Package. Identical

Pin−Out to SOT−23 with 30% Higher Power Handling Capability

• These Devices are Pb−Free and are RoHS Compliant

DS(ON)

360

= Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

ABSOLUTE MAXIMUM RATINGS

ORDERING INFORMATION

(T = 25°C unless otherwise noted)

Symbol

Parameter

Drain−Source Voltage

Ratings

−30

Unit

†

Device

Package

Shipping

DSS

GSS

FDN360P

SOT−23

(Pb-Free,

Halide Free)

3000 /

Tape & Reel

Gate−Source Voltage

Drain Current

Continuous (Note 1a)

Pulsed

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

−2

−10

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.5

0.46

Operating and Storage Junction

Temperature Range

−55 to +150

T , T

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

Thermal Resistance,

Junction−to−Ambient (Note 1a)

°C/W

250

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

Publication Order Number:

January, 2023 − Rev. 8

FDN360P/D

12 3 4 5 6

中文翻译

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与FDN360P-NBGT003B相关器件

型号	品牌	获取价格	描述	数据表
FDN361	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrenchビヌ
FDN361AN	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrenchビヌ
FDN361AN	TYSEMI	获取价格	SuperSOT-3
FDN361BN	FAIRCHILD	获取价格	30V N-Channel, Logic Level, PowerTrench MOSFET
FDN361BN	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，110mΩ
FDN361BN	TYSEMI	获取价格	SuperSOT-3
FDN361BN	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDN361BN-G	FAIRCHILD	获取价格	暂无描述
FDN363N	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta
FDN363N	ROCHESTER	获取价格	1A, 100V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, SUPERSOT-3

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